Kaist IP US LLC v. Samsung Electronics Co., Ltd., et al, No. 2:16-cv-01314 (E.D. Tex. May 29, 2018)

From the Opinion

The passage below is extracted verbatim from the opening of the document. It has not been editorially summarized — consult the full opinion for the court's complete reasoning.

Plaintiff moves to exclude certain portions of Dr. Vivek Subramanian’ rebuttal report on infringement. Pl.’s Mot. to Exclude [Dkt. # 219]. The Court will GRANT the motion IN PART. * * * A. Subramanian’s Opinion Concerning Whether “Double-Gate FinFET” is Limiting (¶¶ 82–89) Plaintiff contends paragraphs 82–89 of Subramanian’s rebuttal report concern an issue the Court has already resolved—namely, whether “double-gate FinFET” limits the claimed devices to only two gates. Pl.’s Mot. [Dkt. # 219] at 2–3.